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 EMG2DXV5T1, EMG5DXV5T1
Preferred Devices
Dual Bias Resistor Transistors
NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-553 package which is designed for low power surface mount applications.
Features http://onsemi.com
NPN SILICON BIAS RESISTOR TRANSISTORS
(3) R1 R2 DTr2
(2) R2
(1) R1 DTr1
* * * * * * *
Simplifies Circuit Design Reduces Board Space Reduces Component Count Moisture Sensitivity Level: 1 Available in 8 mm, 7 inch Tape and Reel Lead-Free Solder Plating Pb-Free Packages are Available
(4)
(5)
MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc
5 1
SOT-553 CASE 463B
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance - Junction-to-Ambient Thermal Resistance - Junction-to-Lead Junction and Storage Temperature Range Symbol PD Max 230 (Note 1) 338 (Note 2) 1.8 (Note 1) 2.7 (Note 2) 540 (Note 1) 370 (Note 2) 264 (Note 1) 287 (Note 2) -55 to +150 Unit mW C/W C/W C/W C
MARKING DIAGRAM
5 XX M G G 1 xx = Device Code xx= UF (EMG5) UP (EMG2) M = Date Code G = Pb-Free Package (Note: Microdot may be in either location)
RqJA RqJL TJ, Tstg
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2005
1
October, 2005 - Rev. 0
Publication Order Number: EMG5DXV5/D
EMG2DXV5T1, EMG5DXV5T1
DEVICE MARKING AND RESISTOR VALUES
Device EMG2DXV5T1 EMG5DXV5T1 Package SOT-553 SOT-553 Marking UP UF R1 (K) 47 10 R2 (K) 47 47
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS (Q1 & Q2) Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0)EMG2DXV5T1 EMG5DXV5T1 Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) ON CHARACTERISTICS (Q1 & Q2) (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) EMG2DXV5T1 EMG5DXV5T1 hFE VCE(sat) VOL EMG2DXV5T1 EMG5DXV5T1 VOH R1 R1/R2 - - 4.9 32.9 7.0 0.8 0.17 - - - 47 10 1.0 0.21 0.2 0.2 - 61.1 13 1.2 0.25 Vdc kW 80 80 - 140 140 - - - 0.25 Vdc Vdc ICBO ICEO IEBO V(BR)CBO V(BR)CEO - - - - 50 50 - - - - - - 100 500 0.1 0.2 - - nAdc nAdc mAdc Vdc Vdc Symbol Min Typ Max Unit
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) Input Resistor Resistor Ratio EMG2DXV5T1 EMG5DXV5T1 EMG2DXV5T1 EMG5DXV5T1
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 -50 RqJA = 370C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 150
Figure 1. Derating Curve
http://onsemi.com
2
EMG2DXV5T1, EMG5DXV5T1
TYPICAL ELECTRICAL CHARACTERISTICS -- EMG2DXV5T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS
10 IC/IB = 10
1000 hFE , DC CURRENT GAIN (NORMALIZED)
VCE = 10 V TA = 75C 25C -25C
1 TA = -25C 0.1 25C 75C
100
0.01
0
20 40 IC, COLLECTOR CURRENT (mA)
50
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
1 0.8 C ob , CAPACITANCE (pF) 0.6 0.4 0.2 0
IC, COLLECTOR CURRENT (mA)
f = 1 MHz IE = 0 V TA = 25C
100 75C 10 1 0.1
25C TA = -25C
0.01 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C
1
0.1
0
10
20 30 40 IC, COLLECTOR CURRENT (mA)
50
Figure 6. Input Voltage versus Output Current
http://onsemi.com
3
EMG2DXV5T1, EMG5DXV5T1
TYPICAL ELECTRICAL CHARACTERISTICS - EMG5DXV5T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 300 250 hFE , DC CURRENT GAIN 200 150 100 50 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 0 1 2 4 6 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 90 100 VCE = 10 TA = 75C 25C -25C
TA = -25C 25C
0.1 75C 0.01
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C
100 75C IC, COLLECTOR CURRENT (mA) 25C
TA = -25C 10
VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
10 VO= 0.2 V V in , INPUT VOLTAGE (VOLTS)
TA = -25C
25C 75C 1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
http://onsemi.com
4
EMG2DXV5T1, EMG5DXV5T1
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED LOAD
FROM mP OR OTHER LOGIC
Figure 12. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
VCC
OUT IN LOAD
Figure 13. Open Collector Inverter: Inverts the Input Signal
Figure 14. Inexpensive, Unregulated Current Source
http://onsemi.com
5
EMG2DXV5T1, EMG5DXV5T1
DEVICE ORDERING INFORMATION
Device EMG2DXV5T1 EMG2DXV5T1G EMG2DXV5T5 EMG2DXV5T5G EMG5DXV5T1 EMG5DXV5T1G EMG5DXV5T5 EMG5DXV5T5G Package SOT-553 SOT-553 (Pb-Free) SOT-553 SOT-553 (Pb-Free) SOT-553 SOT-553 (Pb-Free) SOT-553 SOT-553 (Pb-Free) Shipping 4000 / Tape & Reel 4000 / Tape & Reel 8000 / Tape & Reel 8000 / Tape & Reel 4000 / Tape & Reel 4000 / Tape & Reel 8000 / Tape & Reel 8000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com
6
EMG2DXV5T1, EMG5DXV5T1
PACKAGE DIMENSIONS
SOT-553 XV5 SUFFIX 5-LEAD PACKAGE CASE 463B-01 ISSUE B
D -X-
A L
4
5
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b c D E e L HE MILLIMETERS NOM MAX 0.55 0.60 0.22 0.27 0.13 0.18 1.60 1.70 1.20 1.30 0.50 BSC 0.10 0.20 0.30 1.50 1.60 1.70 MIN 0.50 0.17 0.08 1.50 1.10 MIN 0.020 0.007 0.003 0.059 0.043 INCHES NOM 0.022 0.009 0.005 0.063 0.047 0.020 BSC 0.004 0.008 0.059 0.063 MAX 0.024 0.011 0.007 0.067 0.051 0.012 0.067
1
2
3
E -Y-
HE
e
b 5 PL 0.08 (0.003)
c
M
XY
SOLDERING FOOTPRINT*
0.3 0.0118 0.45 0.0177 1.0 0.0394
1.35 0.0531
0.5 0.5 0.0197 0.0197
SCALE 20:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
http://onsemi.com
7
EMG5DXV5/D


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